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Same model may have multiple batches, images only for reference.
R6008FNJTL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

R6008FNJTL

Part No R6008FNJTL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 8A LPTS
Datasheet
R6008FNJTL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 580pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LPTS
Dimension SC-83
Win Source Part Number 1091358-R6008FNJTL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian R6008FNJTL CAD Model

Description

The R6008FNJTL is an N-Channel MOSFET designed for high voltage, high speed switching applications.

  • FET Type: N-Channel
  • Voltage - Drain Source Breakdown (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 8 A
  • Package: LPTS
  • Component Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8336 $59.5056
50+ $2.3249 $116.2450
77+ $2.2523 $173.4271
106+ $2.1796 $231.0376
138+ $2.1070 $290.7660
184+ $1.8890 $347.5760
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Availability: 39,300 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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