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R6011ENX

Part No R6011ENX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 390 mOhm @ 3.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091361-R6011ENX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R6011ENX CAD Model

Description

The Rohm Semiconductor MOSFET is a high-performance N-channel transistor with a maximum power dissipation of 40W (Tc) and a drain-source breakdown voltage of 600V.

  • Continuous Drain Current: 11A (Tc) @ 25°C
  • Maximum Rds On: 390 mOhm @ Id,Vgs of 3.8A, 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 32nC @ 10V
  • Package: TO-220FM
  • Mounting: Through-Hole
  • Drive Voltage: 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2688 $63.4400
115+ $1.0411 $119.7265
175+ $1.0085 $176.4875
240+ $0.9760 $234.2400
310+ $0.9436 $292.5160
410+ $0.8459 $346.8190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 69 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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