The R6012JNJGTL is a MOSFET transistor that belongs to the Discrete Semiconductor Products category from Rohm Semiconductor.

• Package: Tape and reel package with 1000 units per standard package.
• FET Type: N-channel
• Drain to Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 12A @ 25 degrees Celsius
• Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
• Vgs(th) (Max) @ Id: 7V @ 2.5mA
• Power Dissipation: 160W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100V
• Vgs (Max): +/- 30V
• Temperature Range: -55 degrees Celsius to 150 degrees Celsius (TJ)
• Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB package with an LPTS supplier device package.