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Same model may have multiple batches, images only for reference.
R6015ANZC8 Real Image
Same model may have multiple batches, images only for reference.

R6015ANZC8

Part No R6015ANZC8
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO3PF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.15V @ 1mA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PF
Dimension TO-3P-3 Full Pack
Win Source Part Number 1091364-R6015ANZC8
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R6015ANZC8 CAD Model

Description

The Rohm Semiconductor MOSFET is a not for new designs product that has a medium popularity.

  • Win Source Part Number: 1091364-R6015ANZC8
  • Packaging: tube/rail
  • Category: discrete semiconductor products
  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation (Max): 110W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Case/Package: TO-3PF
  • Dimension: TO-3P-3 Full Pack
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 15A (Tc)
  • Gate-Source Threshold Voltage: 4.15V @ 1mA
  • Max Gate Charge: 50nC @ 10V
  • Max Input Capacitance: 1700pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 300 mOhm @ 7.5A, 10V

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