The Rohm Semiconductor R6020ENZC8 is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

• Drain to Source Voltage (Vdss): 600 V
• Continuous Drain Current (Id): 20A (Tc) @ 25°C
• Maximum On-Resistance (Rds On): 196mOhm @ 9.5A and 10V gate-source voltage (Vgs)
• Gate Threshold Voltage (Vgs(th)): 4V @ 1mA
• Package: TO-3PF package
• Maximum Gate Charge (Qg): 60 nC @ 10V gate-source voltage (Vgs)
• Input Capacitance (Ciss): 1400 pF @ 25 V drain-source voltage (Vds)
• Maximum Voltage (Vgs): ±20V
• Operating Temperature Range: 150°C (TJ)
• Compliance: ROHS3