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R6024ENX

Part No R6024ENX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 24A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 1650pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 165 mOhm @ 11.3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1006562-R6024ENX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R6024ENX CAD Model

Description

Rohm Semiconductor's R6024ENX is an active electronic component that is a N-channel MOSFET.

  • Power Dissipation: 40W (Tc)
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Case/Package: TO-220FM
  • Mounting: Through Hole
  • Gate-Source Voltage: ±20V
  • Rds On: 165 mOhm @ 11.3A, 10V

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