The 1219006-R6025JNZ4C13 is an N-Channel MOSFET transistor from Rohm Semiconductor.

• Drain to Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 25A @ 25°C
• Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
• Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
• Mounting: Through a hole
• Package: TO-247-3
• Category: Discrete Semiconductor Products, specifically Transistors - FETs, MOSFETs - Single
• Best Suited For: Applications that require high voltage and high current, such as power supplies, motor control, and inverters.
• Maximum Power Dissipation: 306W (Tc)
• Temperature Range: -55°C ~ 150°C (TJ).