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R6030ENX

Part No R6030ENX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30A TO220FM / N-Channel 600 V 30A (Tc) 40W (Tc) Through Hole TO-220FM
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Rohm Semiconductor
Packaging Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220FM
Case / Package TO-220-3 Full Pack
Base Product Number R6030
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number R6030ENXCT,R6030ENXCT-ND
Standard Package 500
Win Source Part Number 1325272-R6030ENX
Ultra Librarian 3D Model Ultra Librarian R6030ENX CAD Model

Description

The Rohm Semiconductor R6030ENX is an N-Channel MOSFET transistor that comes in a TO-220FM package.

  • Maximum Drain-to-Source Voltage: 600V
  • Continuous Drain Current: 30A @ 25°C
  • Rds On: 130mOhm @ 14.5A and 10V
  • Gate Charge: 85nC @ 10V
  • Input Capacitance: 2100pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Operating Temperature Range: -55°C to 150°C

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