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Same model may have multiple batches, images only for reference.
RCJ330N25TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RCJ330N25TL

Part No RCJ330N25TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 33A LPTS
Datasheet
RCJ330N25TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 1.56W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 16.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LPTS
Dimension SC-83
Win Source Part Number 027223-RCJ330N25TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RCJ330N25TL CAD Model

Description

The Rohm Semiconductor MOSFET is a high-performance N-channel semiconductor device that is designed to deliver reliable and efficient performance.

  • Maximum Power Dissipation: 1.56W (Ta), 40W (Tc)
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 33A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id, Vgs: 105 mOhm @ 16.5A, 10V
  • Package: SC-83 dimension
  • Mounting Technology: SMD (SMT) technology
  • Category: Discrete Semiconductor Products
  • Status: active
  • Operating Temperature Range: 150°C (TJ)
  • Popularity Rating: Medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2323 $61.6150
115+ $1.0112 $116.2880
180+ $0.9796 $176.3280
245+ $0.9479 $232.2355
320+ $0.9164 $293.2480
425+ $0.8216 $349.1800
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