The MOSFET P-Channel Transistor from Rohm Semiconductor is a discrete semiconductor product commonly used in electronic circuits. It is designed for FET (Field-Effect Transistor) applications and belongs to the MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology. This transistor has a Vgs(th) (Max) @ Id of 2.5V @ 1mA and a maximum power dissipation of 101W (Ta). The maximum Vgs (Gate-to-Source Voltage) is ±20V. This active product is widely used in various electronic applications, including power amplifiers, motor control, and switching circuits. With its low Rds On (Drain-Source On-Resistance) of 12.7mOhm @ 70A, 10V, it provides efficient performance and helps minimize power losses. The MOSFET P-Channel Transistor is available in a tape & reel package, making it suitable for automated assembly processes.