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Same model may have multiple batches, images only for reference.
RE1C001UNTCL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RE1C001UNTCL

Part No RE1C001UNTCL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.1A EMT3FM
Datasheet
RE1C001UNTCL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Input Capacitance 7.1pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 100mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package EMT3F (SOT-416FL)
Dimension SC-89, SOT-490
Win Source Part Number 145304-RE1C001UNTCL
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RE1C001UNTCL CAD Model

Description

The RE1C001UNTCL is a medium popularity IC that is ideal for use in a range of electronic devices from Rohm Semiconductor.

  • Type: N-channel MOSFET
  • Maximum Power Dissipation: 150mW (Ta)
  • Applications: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,035+ $0.0246 $50.0610
4,330+ $0.0231 $100.0230
6,730+ $0.0223 $150.0790
9,620+ $0.0208 $200.0960
12,500+ $0.0200 $250.0000
15,625+ $0.0192 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 175,000 pieces
MOQ: 2035 pcs
Order Increment : 1 pcs
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