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Same model may have multiple batches, images only for reference.
RGTH60TS65DGC13 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RGTH60TS65DGC13

Part No RGTH60TS65DGC13
Manufacturer Rohm Semiconductor
Catalog IGBTs - Single
Description IGBT TRENCH FIELD 650V 58A TO247
Datasheet
RGTH60TS65DGC13 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Rohm Semiconductor
Series -
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 58 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Power - Max 194 W
Switching Energy -
Input Type Standard
Gate Charge 58 nC
Td (on/off) @ 25°C 27ns/105ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 58 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number RGTH60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376616-RGTH60TS65DGC13
Ultra Librarian 3D Model Ultra Librarian RGTH60TS65DGC13 CAD Model

Description

The 1376616-RGTH60TS65DGC13 is a single IGBT (Insulated Gate Bipolar Transistor) from Rohm Semiconductor.

  • Maximum Collector Current: 58A
  • Maximum Collector-Emitter Breakdown Voltage: 650V
  • On-State Voltage: 2.1V @ a gate-emitter voltage of 15V and a collector current of 30A
  • Reverse Recovery Time: 58ns
  • Gate Charge: 58nC
  • Maximum Power Dissipation: 194W
  • Package: TO-247-3
  • Mounting Type: Through-Hole

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