The RJP020N06T100 is an N-channel MOSFET from Rohm Semiconductor.

• Case/Package: It comes in an MPT3 case/package and is mounted using SMD (SMT) technology.
• Power Dissipation: The power dissipation (max) is 500mW (Ta) and the operating temperature range is 150°C (TJ).
• Voltage: The drain-source breakdown voltage is 60V and the continuous drain current @ 25°C is 2A (Ta).
• Threshold Voltage: The gate-source threshold voltage is 1.5V @ 1mA and the max gate charge is 10nC @ 4V.
• Capacitance: The max input capacitance is 160pF @ 10V and the maximum gate-source voltage is ±12V.
• Rds On: The maximum Rds On @ Id,Vgs is 240 mOhm @ 2A, 4.5V.
• Popularity: This product is common-used and has high popularity.