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Same model may have multiple batches, images only for reference.
RP1E090RPTR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RP1E090RPTR

Part No RP1E090RPTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9A MPT6
Datasheet
RP1E090RPTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 30nC @ 5V
Max Input Capacitance 3000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 16.9 mOhm @ 9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package MPT6
Dimension 6-SMD, Flat Leads
Win Source Part Number 1092583-RP1E090RPTR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RP1E090RPTR CAD Model

Description

The Rohm Semiconductor RP1E090RPTR is a P-channel MOSFET from Rohm Semiconductor.

  • Power Dissipation: 2W
  • Continuous Drain Current: 9A @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Rds On (Max): 16.9 mOhm @ 9A and 10V
  • Popularity: Medium
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8753 $61.2710
165+ $0.7182 $118.5030
250+ $0.6958 $173.9500
345+ $0.6734 $232.3230
445+ $0.6509 $289.6505
595+ $0.5835 $347.1825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,400 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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