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RS1E321GNTB1 Real Image

Same model may have multiple batches, images only for reference.

RS1E321GNTB1 Real Image

Same model may have multiple batches, images only for reference.

RS1E321GNTB1

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Part No	RS1E321GNTB1
Manufacturer	Rohm Semiconductor
Catalog	FETs - Single
Description	RS1E321GN IS A POWER MOSFET WITH
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Rohm Semiconductor
Packaging	Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) at 25°C	32A , 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Maximum) at Id, Vgs	2.1mOhm at 32A, 10V
Vgs(th) (Maximum) at Id	2.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs	42.8nC at 10V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	2850pF at 15V
Power Dissipation (Maximum)	3W
Temperature Range - Operating	150°C
Mounting Style	SMD
Supplier Device Package	8-HSOP
Manufacturer Package	8-PowerTDFN
Manufacturer Pack Quantity	2,500
MSL Level	1 (Unlimited)
Popularity	Medium
Supply and Demand Status	Balance
Win Source Part Number	803338-RS1E321GNTB1
Ultra Librarian 3D Model	Ultra Librarian RS1E321GNTB1 CAD Model

Alternative Products

Description

The RS1E321GNTB1 is an N-channel MOSFET from Rohm Semiconductor.

Drain to Source Voltage: 30V
Maximum Power Dissipation: 3W
Maximum Rds On: 2.1mOhm @ 32A @ 10V
Package: 8-HSOP
Temperature Range: 150°C

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
215+	$0.2691	$57.8565
525+	$0.2218	$116.4450
810+	$0.2148	$173.9880
1,115+	$0.2079	$231.8085
1,440+	$0.2010	$289.4400
1,925+	$0.1802	$346.8850

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 7,500 pieces

MOQ: 215 pcs

Order Increment : 1 pcs

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