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Same model may have multiple batches, images only for reference.
RS1G260MNTB Real Image
Same model may have multiple batches, images only for reference.

RS1G260MNTB

Part No RS1G260MNTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 26A 8HSOP
Datasheet
RS1G260MNTB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 26A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 2988pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 35W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 26A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSOP
Dimension 8-PowerTDFN
Win Source Part Number 1092700-RS1G260MNTB
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian RS1G260MNTB CAD Model

Description

The RS1G260MNTB is an N-channel MOSFET manufactured by Rohm Semiconductor.

  • Manufacturer: Rohm Semiconductor
  • Type: N-Channel MOSFET
  • Power Dissipation (Ta): 3W (Ta)
  • Power Dissipation (Tc): 35W (Tc)
  • RoHS Compliant: Yes
  • Package Quantity: 2,500 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.0374 $52.4862
31+ $3.3128 $102.6968
47+ $3.2092 $150.8324
65+ $3.1057 $201.8705
84+ $3.0022 $252.1848
112+ $2.6916 $301.4592
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,500 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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