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RS1L151ATTB1

Name: RS1L151ATTB1
Brand: Rohm Semiconductor
SKU: 1350535
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	RS1L151ATTB1
Manufacturer	Rohm Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	PCH -60V -56A, HSOP8, POWER MOSF / P-Channel 60 V 56A (Tc) 3W (Ta) Surface Mount 8-HSOP
Datasheet	RS1L151ATTB1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Package	Tape & Reel
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6900 pF @ 30 V
Power Dissipation (Max)	3W (Ta)
Temperature Range - Operating	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSOP
Package / Case	8-PowerTDFN
Base Product Number	RS1L
Standard Package	2,500
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1350535-RS1L151ATTB1
Ultra Librarian 3D Model	Ultra Librarian RS1L151ATTB1 CAD Model

Description

The RS1L151ATTB1 is a P-channel MOSFET manufactured by Rohm Semiconductor.

Category: Discrete Semiconductor Products
Application: Various
Supply and Demand Status: Balanced
Drain to Source Voltage: 60V
Maximum Power Dissipation: 3W
Design: High-speed switching and low on-resistance
Benefit: Reliable and cost-effective for power management applications

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
16+	$3.2047	$51.2752
34+	$3.0019	$102.0646
52+	$2.9005	$150.8260
75+	$2.6977	$202.3275
97+	$2.5963	$251.8411
121+	$2.4948	$301.8708

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 22,500 pieces

MOQ: 16 pcs

Order Increment : 1 pcs

Qty:

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