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Same model may have multiple batches, images only for reference.
RS3E095BNGZETB Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RS3E095BNGZETB

Part No RS3E095BNGZETB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description NCH 30V 9.5A MIDDLE POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 8.3nC @ 4.5V
Max Input Capacitance 680pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Tc)
Maximum Rds On at Id,Vgs 14.6 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1092737-RS3E095BNGZETB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RS3E095BNGZETB CAD Model

Description

The RS3E095BNGZETB is an N-channel MOSFET belonging to the discrete semiconductor products category.

  • Power Dissipation: 2W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Continuous Drain Current: 9.5A (Ta)
  • Maximum Rds On at Id,Vgs: 14.6 mOhm @ 9.5A, 10V
  • Supply and Demand Status: balanced
  • Case/Package: 8-SOP
  • Dimension: 8-SOIC (0.154", 3.90mm Width)

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3531 $58.2615
400+ $0.2898 $115.9200
620+ $0.2807 $174.0340
855+ $0.2717 $232.3035
1,100+ $0.2626 $288.8600
1,475+ $0.2354 $347.2150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,030 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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