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RS3E180ATTB1

Part No RS3E180ATTB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 18A 8SOP  /  P-Channel 30 V 18A (Ta) 1.4W (Ta) Surface Mount 8-SOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 15 V
Power Dissipation (Max) 1.4W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number RS3E
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names RS3E180ATTB1DKR,RS3E180ATTB1CT,RS3E180ATTB1TR
Standard Package 2,500
Win Source Part Number 1195094-RS3E180ATTB1
Ultra Librarian 3D Model Ultra Librarian RS3E180ATTB1 CAD Model

Description

The RS3E180ATTB1 is a P-channel MOSFET transistor used in discrete semiconductor products.

  • Channel Type: P-channel
  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current: 18A @ 25°C
  • Maximum Gate Charge: 160nC @ 10V
  • Input Capacitance: 7200pF @ 15V
  • Maximum Power Dissipation: 1.4W
  • Gate-Source Threshold Voltage: 2.5V @ 5mA
  • RoHS Compliant: Yes
  • ECCN: EAR99
  • Package: 8-SOIC
  • Width: 3.90mm
  • Supplier Device Package: 8-SOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.5195 $52.1560
19+ $5.3493 $101.6367
29+ $5.1821 $150.2809
40+ $5.0150 $200.6000
52+ $4.8478 $252.0856
70+ $4.3463 $304.2410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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