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Same model may have multiple batches, images only for reference.
RSD160P05TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RSD160P05TL

Part No RSD160P05TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 45V 16A CPT3
Datasheet
RSD160P05TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 45V
Continuous Drain Current at 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 16nC @ 5V
Max Input Capacitance 2000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 16A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 122328-RSD160P05TL
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RSD160P05TL CAD Model

Description

The Rohm Semiconductor RSD160P05TL is a P-Channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 20W (Tc)
  • Drain-Source Breakdown Voltage: 45V
  • Continuous Drain Current @ 25°C: 16A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 50 mOhm @ 16A, 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting: SMD (SMT) technology
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Temperature Range: 150°C (TJ)
  • Case / Package: CPT3
  • Supply and demand status: limited

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63+ $1.6010 $100.8630
97+ $1.5509 $150.4373
134+ $1.5009 $201.1206
173+ $1.4509 $251.0057
231+ $1.3008 $300.4848
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