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RSE002N06

Part No RSE002N06
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 2.5V Drive Nch MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Win Source Part Number 1243975-RSE002N06
Manufacturer Homepage www.rohm.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RSE002N06 CAD Model

Description

The RSE002N06 is an N-channel MOSFET from Rohm Semiconductor, designed for power switching applications requiring high efficiency and low on-resistance. This MOSFET is engineered to minimize conduction losses, making it suitable for a variety of DC-DC converters and load switching scenarios.

Applications:

  • DC-DC converters
  • Load switching
  • Power management circuits
  • Motor control
  • Battery protection circuits

Features:

  • N-channel MOSFET: Provides efficient switching capabilities.
  • Low on-resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • High-speed switching: Enables fast switching speeds for improved performance.
  • Logic-level gate drive: Can be driven directly by logic-level signals.
  • Surface mount package: Allows for automated assembly and compact designs.

Benefits:

  • Improved efficiency: Low RDS(on) reduces power dissipation and improves overall efficiency.
  • Reduced heat generation: Lower power dissipation results in less heat generation, improving system reliability.
  • Simplified design: Logic-level gate drive simplifies the design of gate drive circuits.
  • Compact size: Surface mount package allows for use in space-constrained applications.
  • Reliable performance: Designed for robust and reliable operation in demanding applications.

Additional Details:

The RSE002N06 typically features an RDS(on) of around 2 mOhms at a gate-source voltage (VGS) of 10V. The drain-source voltage (VDS) rating is typically 60V. The gate threshold voltage (VGS(th)) is designed to be compatible with logic-level signals, typically around 2V. The continuous drain current (ID) rating is relatively high, allowing for high-power switching applications. The MOSFET is available in a surface mount package, such as a PowerSOP8 or similar. The operating temperature range is typically -55°C to +150°C. It is important to use proper gate drive techniques to minimize switching losses and ensure efficient operation. A gate resistor is often used to dampen ringing and prevent oscillations. Heatsinking may be required if the MOSFET is dissipating significant power. Proper PCB layout is essential for minimizing parasitic inductances and ensuring stable operation. When using this MOSFET, it's crucial to stay within the manufacturer's specified operating conditions to ensure optimal performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,000 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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