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Same model may have multiple batches, images only for reference.
RSH125N03TB1 Real Image
Same model may have multiple batches, images only for reference.

RSH125N03TB1

Part No RSH125N03TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12.5A SOP8
Datasheet
RSH125N03TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 28nC @ 5V
Max Input Capacitance 1670pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 9.1 mOhm @ 12.5A, 10V
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1092788-RSH125N03TB1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RSH125N03TB1 CAD Model

Description

The Rohm Semiconductor RSH125N03TB1 is a N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Power Dissipation: 2W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 12.5A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 28nC @ 5V
  • Maximum Input Capacitance: 1670pF @ 10V
  • Maximum Rds On @ Id,Vgs: 9.1 mOhm @ 12.5A, 10V
  • Package: 8-SOP
  • Status: Not recommended for new designs
  • Manufacturer: Rohm Semiconductor

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
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Availability: 5,000 pieces
MOQ: 225 pcs
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