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RSQ020N03HZGTR

Part No RSQ020N03HZGTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2A TSMT6 / N-Channel 30 V 2A (Ta) 950mW (Ta) Surface Mount TSMT6 (SC-95)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 134mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.1 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 10 V
Power Dissipation (Max) 950mW (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TSMT6 (SC-95)
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number RSQ020
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 846-RSQ020N03HZGDKR,846-RSQ020N03HZGTR,846-RSQ020N03HZGCT
Standard Package 3,000
Win Source Part Number 1008364-RSQ020N03HZGTR
Ultra Librarian 3D Model Ultra Librarian RSQ020N03HZGTR CAD Model

Description

The RSQ020N03HZGTR is an N-channel MOSFET transistor with a drain-to-source voltage of 30V and a continuous drain current of 2A @ 25°C.

  • Product: RSQ020N03HZGTR
  • Type: N-channel MOSFET Transistor
  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 2A @ 25°C
  • Rds On Maximum: 134mOhm @ 2A and 10V
  • Gate Charge: 3.1nC @ 5V
  • Series: RSQ020
  • Package: SOT-23-6 Thin or TSOT-23-6
  • Input Capacitance: 110pF @ 10V
  • Vgs(th): 2.5V @ 1mA
  • Packaging: Tape and Reel
  • Standard Package: 3,000

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