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RSQ020N03TR

Part No RSQ020N03TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2A TSMT6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 3.1nC @ 5V
Max Input Capacitance 110pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 600mW (Ta)
Maximum Rds On at Id,Vgs 134 mOhm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1092803-RSQ020N03TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSQ020N03TR CAD Model

Description

The 1092803-RSQ020N03TR is a MOSFET component from Rohm Semiconductor.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25 degrees Celsius): 2A (Ta)
  • Maximum Rds On (Id,Vgs): 134 mOhm @ 2A, 10V
  • Mounting: SMD (SMT)
  • Power Dissipation (max): 600mW (Ta)
  • Drive Voltage (max Rds On, Min Rds On): 4V, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Package: TSMT6 (SC-95)
  • Dimension: SOT-23-6 Thin, TSOT-23-6
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 3.1nC @ 5V
  • Maximum Input Capacitance: 110pF @ 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3899 $58.4850
365+ $0.3201 $116.8365
560+ $0.3100 $173.6000
775+ $0.3000 $232.5000
1,000+ $0.2901 $290.1000
1,335+ $0.2600 $347.1000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,500 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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