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Same model may have multiple batches, images only for reference.
RSS090P03TB Real Image
Same model may have multiple batches, images only for reference.

RSS090P03TB

Part No RSS090P03TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9A 8-SOIC
Datasheet
RSS090P03TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 39nC @ 5V
Max Input Capacitance 4000pF @ 10V
Maximum Gate-Source Voltage 20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 027534-RSS090P03TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSS090P03TB CAD Model

Description

The RSS090P03TB is a P-channel MOSFET designed and manufactured by Rohm Semiconductor.

  • Supply and demand status: balanced
  • GPTDescription: The RSS090P03TB is a discrete semiconductor product that can be used in various applications. It has a low on-resistance and is suitable for high-speed switching circuits. The MOSFET is designed to handle a maximum power dissipation of 2W @ an operating temperature of 150℃. It is available in reel packaging and can be mounted using SMD (SMT) technology. The RSS090P03TB is a reliable and efficient product that can be used in a wide range of electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
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Availability: 14,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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