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Same model may have multiple batches, images only for reference.
RSU002N06T106 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RSU002N06T106

Part No RSU002N06T106
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.25A UMT3
Datasheet
RSU002N06T106 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Input Capacitance 15pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 2.4 Ohm @ 250mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UMT3
Dimension SC-70, SOT-323
Win Source Part Number 046403-RSU002N06T106
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSU002N06T106 CAD Model

Description

The Rohm Semiconductor MOSFET (N-Channel) is a high-quality electronic component suitable for various applications.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 250mA
  • Maximum Rds On: 2.4 Ohm @ 250mA and 10V
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Input Capacitance: 15pF @ 25V
  • Mounting: SMD (SMT)
  • Case/Package: UMT3
  • Status: not recommended for new designs
  • Maximum Power Dissipation: 200mW (Ta)
  • Operating Temperature Range: -40°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,065+ $0.0470 $50.0550
2,600+ $0.0385 $100.1000
4,025+ $0.0373 $150.1325
5,545+ $0.0361 $200.1745
7,165+ $0.0349 $250.0585
9,585+ $0.0313 $300.0105
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Availability: 6,200 pieces
MOQ: 1065 pcs
Order Increment : 1 pcs
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