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Same model may have multiple batches, images only for reference.
RTF020P02TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RTF020P02TL

Part No RTF020P02TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2A TUMT3
Datasheet
RTF020P02TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 7nC @ 4.5V
Max Input Capacitance 640pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 800mW (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT3
Dimension 3-SMD, Flat Leads
Win Source Part Number 027629-RTF020P02TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RTF020P02TL CAD Model

Description

The Rohm Semiconductor 027629-RTF020P02TL is a P-channel MOSFET with a maximum power dissipation of 800mW @ Ta.

  • Power Dissipation: 800mW @ Ta
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2A @ 25°C
  • Mounting: Surface-Mount Device (SMD) reel
  • Gate-Source Voltage: ±12V
  • Status: Not for new designs
  • Operating Temperature: 150°C (TJ)
  • Rds On @ Id, Vgs: 85 mOhm @ 2A, 4.5V
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Gate Charge: 7nC @ 4.5V
  • Input Capacitance: 640pF @ 10V
  • Package: TUMT3 with 3-SMD, flat leads
  • Supply and Demand Status: Balanced

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