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Same model may have multiple batches, images only for reference.
RTU002P02T106 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RTU002P02T106

Part No RTU002P02T106
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.25A SOT-323
Datasheet
RTU002P02T106 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 250mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UMT3
Dimension SC-70, SOT-323
Win Source Part Number 027647-RTU002P02T106
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RTU002P02T106 CAD Model

Description

The Rohm Semiconductor MOSFET is a medium-popularity electronic component that is perfect for use in various discrete semiconductor products applications.

  • Rds On: It has a maximum Rds On @ Id, Vgs of 1.5 Ohm @ 250mA, 4.5V.
  • Power Dissipation: The MOSFET has a power dissipation of 200mW (Ta) and a temperature range of 150°C (TJ).
  • Case/Package: The UMT3 case/package and SMD (SMT) mounting make it easy to install.
  • Model Number: The RTU002P02T106 model number is a perfect fit for any MOSFET application.

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