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Same model may have multiple batches, images only for reference.
RUF020N02TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RUF020N02TL

Part No RUF020N02TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2A TUMT3
Datasheet
RUF020N02TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 2nC @ 4.5V
Max Input Capacitance 180pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 320mW (Ta)
Maximum Rds On at Id,Vgs 105 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT3
Dimension 3-SMD, Flat Leads
Win Source Part Number 1093079-RUF020N02TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RUF020N02TL CAD Model

Description

The Rohm Semiconductor RUF020N02TL is a high-quality N-channel MOSFET that is designed for use in various electronic applications.

  • Maximum Power Dissipation: 320mW @ Ta
  • Drain-Source Breakdown Voltage: 20V
  • Supply and Demand: Limited supply
  • Package: TUMT3
  • Mounting Type: Surface Mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,140+ $0.0508 $57.9120
2,780+ $0.0416 $115.6480
4,290+ $0.0404 $173.3160
5,885+ $0.0393 $231.2805
7,580+ $0.0381 $288.7980
10,000+ $0.0347 $347.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 1140 pcs
Order Increment : 1 pcs
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