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Same model may have multiple batches, images only for reference.
UN221E-(TX) Real Image
Same model may have multiple batches, images only for reference.

UN221E-(TX)

Part No UN221E-(TX)
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW MINI3
Datasheet
UN221E-(TX) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 60 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package Mini3-G1
Win Source Part Number 053275-UN221E-(TX)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UN221E-(TX) CAD Model

Description

The Panasonic Electronic Components UN221E-(TX) is a pre-biased NPN transistor used in discrete semiconductor products.

  • Package: Reel
  • Mounting: Surface
  • Frequency Transition: 150MHz
  • Resistor Values: 47k for base and 22k for emitter base
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Collector Cut-Off Current (max): 500nA
  • Typical Gain (hFE) (min): 60 @ 5mA, 10V
  • Maximum Power Dissipation: 200mW
  • Supply and Demand Status: Sufficient

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