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MMBT2369LT1

Part No MMBT2369LT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS SS GP NPN 15V SOT23 / Bipolar (BJT) Transistor NPN 15 V 200 mA 225 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 15 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 350mV
Power - Max 225 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number MMBT2369
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 885313-MMBT2369LT1
Ultra Librarian 3D Model Ultra Librarian MMBT2369LT1 CAD Model

Description

The MMBT2369LT1 transistor is a high-performance, small-signal NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor. This device is well-suited for a wide range of applications that require efficient current control and amplification. Renowned for its reliability and consistency, the MMBT2369LT1 is a go-to component for designers in the electronics industry.

Key Features

  • Voltage and Current Ratings: It supports a collector-emitter voltage (Vceo) of 15V, collector-base voltage (Vcbo) of 40V, and emitter-base voltage (Vebo) of 6.0V. The continuous collector current (Ic) is rated at 200mA, making it suitable for moderate power applications.
  • High Gain Bandwidth Product: The MMBT2369LT1 boasts a transition frequency (fT) of 300MHz, which ensures high-frequency performance and makes it ideal for amplification in RF applications.
  • Low Noise: This transistor is designed for low noise operation, which is critical in audio amplifiers and sensitive signal processing circuits.
  • Surface-Mount Package: The SOT-23 package allows for efficient use of PCB space, making it a perfect choice for compact designs.
  • Thermal Performance: The device operates within a junction temperature range of -55°C to +150°C, providing stable performance across a wide range of environmental conditions.

Applications

The MMBT2369LT1 is versatile and can be used in various applications, including:

  • Signal amplification
  • Switching circuits
  • Audio amplifiers
  • RF amplifiers
  • Drive stages in high-fidelity amplifiers and oscillators

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MMBT2369LT1 is no exception. It is built to meet or exceed industry standards for performance and reliability. Each transistor is subjected to rigorous testing and quality control measures to ensure that it performs to the specifications under varying conditions and throughout its lifespan.

Conclusion

The MMBT2369LT1 from ON Semiconductor represents a blend of efficiency, performance, and reliability. Whether it's for general-purpose amplification or specific high-frequency applications, this transistor is engineered to deliver optimal results in a compact footprint. Its robust design and thermal management capabilities make it an excellent choice for designers looking to create durable and high-performance electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
600+ $0.0839 $50.3400
1,455+ $0.0689 $100.2495
2,250+ $0.0667 $150.0750
3,100+ $0.0646 $200.2600
4,010+ $0.0624 $250.2240
5,360+ $0.0560 $300.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 700 pieces
MOQ: 600 pcs
Order Increment : 1 pcs
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