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Same model may have multiple batches, images only for reference.
RUF025N02TL Real Image
Same model may have multiple batches, images only for reference.

RUF025N02TL

Part No RUF025N02TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.5A TUMT3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 1mA
Max Gate Charge 5nC @ 4.5V
Max Input Capacitance 370pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 320mW (Ta)
Maximum Rds On at Id,Vgs 54 mOhm @ 2.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT3
Dimension 3-SMD, Flat Leads
Win Source Part Number 1093080-RUF025N02TL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RUF025N02TL CAD Model

Description

The RUF025N02TL is an N-channel MOSFET from Rohm Semiconductor.

  • Power Dissipation: 320mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 2.5A (Ta)
  • Maximum Rds On @ Id,Vgs: 54 mOhm @ 2.5A, 4.5V
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Gate Charge: 5nC @ 4.5V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2801 $58.8210
505+ $0.2298 $116.0490
780+ $0.2227 $173.7060
1,075+ $0.2155 $231.6625
1,390+ $0.2084 $289.6760
1,860+ $0.1868 $347.4480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 400 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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