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Same model may have multiple batches, images only for reference.
RV1C002UN Real Image
Same model may have multiple batches, images only for reference.

RV1C002UN

Part No RV1C002UN
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.15A VML0806
Datasheet
RV1C002UN Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Input Capacitance 12pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 100mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 150mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VML0806
Dimension 3-SMD, No Lead
Win Source Part Number 303227-RV1C002UN
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RV1C002UN CAD Model

Description

The Rohm Semiconductor MOSFET is a high-performance N-channel transistor designed for use in discrete semiconductor products.

  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 100mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 150mA (Ta)
  • Maximum Rds On @ Id, Vgs: 2 Ohm @ 150mA, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Gate-Source Threshold Voltage: 1V @ 100μA
  • Maximum Input Capacitance: 12pF @ 10V
  • Designed For: Low Drive Voltage Applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,010+ $0.0497 $50.1970
2,455+ $0.0408 $100.1640
3,790+ $0.0396 $150.0840
5,225+ $0.0383 $200.1175
6,760+ $0.0370 $250.1200
9,040+ $0.0332 $300.1280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,919 pieces
MOQ: 1010 pcs
Order Increment : 1 pcs
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