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SCT3040KRC14

Part No SCT3040KRC14
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 5.6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1337 pF @ 800 V
Power Dissipation (Max) 262W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
Base Product Number SCT3040
Other Names 846-SCT3040KRC14,SCT3040KRC14
Standard Package 240
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278200-SCT3040KRC14
Ultra Librarian 3D Model Ultra Librarian SCT3040KRC14 CAD Model

Description

The Rohm Semiconductor SCT3040KRC14 is a SiCFET (Silicon Carbide) N-Channel transistor used in FETs, MOSFETs - Single.

  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 10mA
  • Power Dissipation (Max): 262W
  • Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800V
  • Packaging: Tube
  • Standard Package: 240
  • Temperature Range: 175°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $25.3776 $76.1328
6+ $20.8226 $124.9356
9+ $20.1718 $181.5462
12+ $19.5211 $234.2532
16+ $18.8705 $301.9280
21+ $16.9184 $355.2864
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,250 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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