SCT3040KRC14

Part No SCT3040KRC14
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 5.6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1337 pF @ 800 V
Power Dissipation (Max) 262W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
Base Product Number SCT3040
Other Names 846-SCT3040KRC14,SCT3040KRC14
Standard Package 240
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278200-SCT3040KRC14

Description

The Rohm Semiconductor SCT3040KRC14 is a SiCFET (Silicon Carbide) N-Channel transistor used in FETs, MOSFETs - Single. The drain to source voltage (Vdss) is 1200V and the current - continuous drain (Id) @ 25°C is 55A (Tc). The Rds On (Max) @ Id, Vgs is 52mOhm @ 20A, 18V and the Vgs(th) (Max) @ Id is 5.6V @ 10mA. The transistor has a power dissipation (Max) of 262W and a gate charge (Qg) (Max) @ Vgs of 107 nC @ 18V. The input capacitance (Ciss) (Max) @ Vds is 1337 pF @ 800V. The transistor is available in tube packaging and has a standard package of 240. The transistor has a temperature range of 175°C (TJ) and a drive voltage (Max Rds On, Min Rds On) of 18V. and the MSL level is 1 (Unlimited).

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
3+ $18.9590 $56.8770
7+ $15.5560 $108.8920
10+ $15.0700 $150.7000
14+ $14.5840 $204.1760
18+ $14.0980 $253.7640
24+ $12.6390 $303.3360
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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