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Same model may have multiple batches, images only for reference.
SH8J31GZETB Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SH8J31GZETB

Part No SH8J31GZETB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 60V PCH+PCH MIDDLE POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 70 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2500pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1095642-SH8J31GZETB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SH8J31GZETB CAD Model

Description

The SH8J31GZETB is a 2 P-Channel (Dual) FET type electronic component manufactured by Rohm Semiconductor.

  • Power Dissipation: 2W
  • Operating Temperature: -55°C to 150°C
  • Ideal for: use in various electronic devices that require high power handling capacity

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.1065 $53.3845
30+ $3.3694 $101.0820
46+ $3.2641 $150.1486
64+ $3.1588 $202.1632
82+ $3.0536 $250.3952
110+ $2.7377 $301.1470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,050 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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