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Same model may have multiple batches, images only for reference.
SH8K15TB1 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SH8K15TB1

Part No SH8K15TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 9A 8SOP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A
Maximum Rds On at Id,Vgs 21 mOhm @ 9A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 8.5nC @ 5V
Max Input Capacitance 630pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1095645-SH8K15TB1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SH8K15TB1 CAD Model

Description

The SH8K15TB1 is an N-channel (dual) FET with logic level gate from Rohm Semiconductor.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Rds on @ Id,Vgs: 21 mOhm @ 9A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3130 $57.9050
450+ $0.2576 $115.9200
695+ $0.2495 $173.4025
960+ $0.2414 $231.7440
1,240+ $0.2333 $289.2920
1,660+ $0.2091 $347.1060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 370 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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