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Same model may have multiple batches, images only for reference.
SH8K4TB1 Real Image
Same model may have multiple batches, images only for reference.

SH8K4TB1

Part No SH8K4TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 9A SOP8
Datasheet
SH8K4TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A
Maximum Rds On at Id,Vgs 17 mOhm @ 9A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 21nC @ 5V
Max Input Capacitance 1190pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 028319-SH8K4TB1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SH8K4TB1 CAD Model

Description

The SH8K4TB1 is a high-quality electronic component manufactured by Rohm Semiconductor.

  • Type: dual N-channel FET with logic level gate.
  • Maximum Power Dissipation: 2W.
  • Temperature Range: 150°C (TJ).
  • Drain-Source Breakdown Voltage: 30V.
  • Mounting: SMD (SMT) mounted component.
  • Package: 8-SOP case/package.
  • Continuous Drain Current: 9A @ 25°C.
  • Gate-Source Threshold Voltage: 2.5V @ 1mA.
  • Maximum Rds On: 17 mOhm @ 9A, 10V.
  • Applications: ideal for use in electronic devices that require a high-performance FET with logic level gate.

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