The Rohm Semiconductor SP8J2TB is a dual P-channel FET with a logic level gate.

• FET Channel Type: Dual P-Channel
• Gate Feature: Logic Level Gate
• Power Dissipation (Max): 2W
• Drain-Source Breakdown Voltage: 30V
• Mounting: SMD (SMT)
• Case/Package: 8-SOP
• Continuous Drain Current: 4.5A @ 25°C
• Gate-Source Threshold Voltage: 2.5V @ 1mA
• Gate Charge (Max): 8.5nC @ 5V
• Input Capacitance (Max): 850pF @ 10V
• Rds On (Max) @ Id,Vgs: 56 mOhm @ 4.5A, 10V
• Supply and Demand Status: limited
• Application: industrial power management applications