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Same model may have multiple batches, images only for reference.
SP8J3FU6TB Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SP8J3FU6TB

Part No SP8J3FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 3.5A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A
Maximum Rds On at Id,Vgs 90 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 5.5nC @ 5V
Max Input Capacitance 490pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 047195-SP8J3FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8J3FU6TB CAD Model

Description

The Rohm Semiconductor SP8J3FU6TB is a dual P-channel FET that has a logic level gate feature.

  • FET Channel Type: dual P-channel
  • Gate Feature: logic level gate
  • Status: not for new designs
  • Temperature Range: 150°C
  • Package: 8-SOP
  • Power Dissipation (Max): 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.5A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Gate Charge (Max): 5.5nC @ 5V
  • Input Capacitance (Max): 490pF @ 10V
  • Rds On (Max) @ Id,Vgs: 90 mOhm @ 3.5A, 10V

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Quantity Unit Price Ext. Price
8+ $7.4220 $59.3760
19+ $6.0903 $115.7157
30+ $5.8997 $176.9910
41+ $5.7092 $234.0772
53+ $5.5197 $292.5441
71+ $4.9480 $351.3080
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Availability: 2,500 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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