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Same model may have multiple batches, images only for reference.
SP8J4TB Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SP8J4TB

Part No SP8J4TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 2A 8-SOIC
Datasheet
SP8J4TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A
Maximum Rds On at Id,Vgs 235 mOhm @ 2A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 2.4nC @ 5V
Max Input Capacitance 190pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 129316-SP8J4TB
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SP8J4TB CAD Model

Description

The Rohm Semiconductor electronic component is an obsolete (EOL) product belonging to the category of Discrete Semiconductor Products.

  • Win Source Part Number: 129316-SP8J4TB
  • Power Dissipation (Max): 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA

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