The SST3904MGT116 is an NPN bipolar junction transistor (BJT) from Rohm Semiconductor, designed for general-purpose amplification and switching applications. This transistor features a high current gain and low saturation voltage, making it suitable for a wide range of circuit designs. The compact package allows for high-density mounting.

Applications

• General-purpose amplification
• Switching circuits
• Driver circuits
• Linear amplifiers
• Oscillator circuits

Features

• NPN Bipolar Junction Transistor (BJT)
• High current gain (hFE)
• Low saturation voltage (VCE(sat))
• Small surface mount package (SOT-23)
• Pb-free (RoHS compliant)
• Halogen-free

Benefits

• Versatile Application: Suitable for a wide range of amplification and switching applications due to its general-purpose characteristics.
• High Gain: Provides excellent signal amplification in various circuit configurations.
• Efficient Switching: Low saturation voltage ensures efficient switching performance in digital circuits.
• Compact Design: The small SOT-23 package allows for high-density mounting, ideal for space-constrained applications.
• Environmentally Friendly: Lead-free and halogen-free options support environmentally conscious designs.

Technical Specifications

The SST3904MGT116 has a collector-emitter voltage (VCEO) of 40V, a collector current (IC) of 200mA, and a power dissipation (PD) of 150mW. The typical current gain (hFE) is between 100 and 300. The saturation voltage (VCE(sat)) is typically 0.3V at IC = 10mA and IB = 1mA. The transition frequency (fT) is typically 300 MHz. It is designed to operate over a temperature range of -55°C to 150°C.