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UM6K33N

Part No UM6K33N
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 1.2V Drive Nch + Nch MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Win Source Part Number 1277216-UM6K33N
Manufacturer Homepage www.rohm.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UM6K33N CAD Model

Description

The UM6K33N is a P-channel MOSFET manufactured by Rohm Semiconductor. This MOSFET is designed for load switching and power management applications, especially in portable devices due to its small size and low on-resistance. It comes in a small 6-pin SOT-363 package, ideal for space-constrained applications.

Applications:

  • Load Switching: Used as a switch to control power to different sections of a circuit.
  • Power Management Circuits: Employed in power management units (PMUs) for efficient power distribution.
  • Portable Devices: Suitable for mobile phones, tablets, and other battery-powered devices.
  • DC-DC Conversion: Can be used in DC-DC converters for voltage regulation.
  • Battery Charging Circuits: Useful in battery charging circuits for switching functions.

Features:

  • P-Channel MOSFET: Allows for simpler gate drive circuitry compared to N-channel MOSFETs in certain applications.
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction, improving efficiency.
  • Small SOT-363 Package: Space-saving package for high-density board layouts.
  • Low Threshold Voltage (VGS(th)): Enables operation with low voltage control signals.
  • Fast Switching Speed: Allows for efficient switching in high-frequency applications.
  • Gate Protection Diode: Built-in protection against electrostatic discharge (ESD).

Benefits:

  • Improved Efficiency: Low RDS(on) reduces power dissipation and enhances overall efficiency.
  • Space Saving: The small SOT-363 package reduces board space requirements.
  • Simplified Design: P-channel configuration simplifies gate drive requirements in some applications.
  • Reliable Performance: Robust design ensures stable and reliable operation.
  • ESD Protection: Built-in ESD protection enhances device reliability during handling and operation.

Additional Details:

The UM6K33N's low on-resistance is a key characteristic that minimizes power loss in switching applications. The P-channel configuration is beneficial when a low-side switch is required or when driving the MOSFET from a high-side source. The SOT-363 package offers excellent thermal characteristics for its size, ensuring efficient heat dissipation. The datasheet provides specific values for RDS(on) at different gate voltages and drain currents, which are crucial for accurate circuit design. The device's low threshold voltage enables compatibility with low-voltage control signals, making it suitable for modern portable devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1848 $58.2120
760+ $0.1525 $115.9000
1,175+ $0.1478 $173.6650
1,615+ $0.1432 $231.2680
2,105+ $0.1374 $289.2270
2,805+ $0.1236 $346.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,200 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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