The K4B2G0446QB-YK0 is a 2Gb DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. It is designed for high-performance applications requiring fast data transfer rates and low power consumption. This memory chip is organized as 128M x 16 bits x 8 banks.

Applications

• Desktop and laptop computers
• Graphics cards
• Gaming consoles
• Networking equipment
• High-performance embedded systems

Features

• Capacity: 2Gb (Gigabit)
• Organization: 128M x 16 x 8 banks
• DDR3 interface
• Data transfer rate: Up to 1600 Mbps
• Operating voltage: 1.5V
• 8 internal banks for concurrent operation
• RoHS compliant

Benefits

• High bandwidth: DDR3 technology provides fast data transfer rates, improving system performance.
• Low power consumption: Operates at 1.5V, reducing energy consumption and heat generation.
• Increased memory capacity: 2Gb of memory allows for handling large datasets and complex applications.
• Improved system responsiveness: Fast access times and high data transfer rates result in quicker application loading and execution.
• Reliable performance: Designed for stable and reliable operation in demanding environments.

Technical Specifications

The K4B2G0446QB-YK0 supports a clock frequency of up to 800 MHz, resulting in a data transfer rate of up to 1600 Mbps. It operates at a supply voltage of 1.5V ± 0.075V. The chip features 8 internal banks that allow for concurrent operation, improving overall memory performance. The device also includes on-chip termination (ODT) to improve signal integrity and reduce reflections on the memory bus. The operating temperature range is typically from 0°C to 85°C.

The K4B2G0446QB-YK0 is available in a 78-ball FBGA (Fine-pitch Ball Grid Array) package, which provides a compact footprint and facilitates surface mounting on printed circuit boards. The device is RoHS compliant, ensuring that it meets environmental standards for the restriction of hazardous substances.