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K4B4G1646E-BYK0

Part No K4B4G1646E-BYK0
Manufacturer Samsung
Catalog Memory
Description DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.5V 96-Pin FBGA
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1552+
Reference case BGA
Manufacturer Samsung
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Win Source Part Number 746465-K4B4G1646E-BYK0
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian K4B4G1646E-BYK0 CAD Model

Description

The K4B4G1646E-BYK0 is a 4Gbit DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) component manufactured by Samsung. This memory chip is designed for high-performance computing, graphics, and other memory-intensive applications. It is organized as 256M x 16, offering a significant capacity suitable for a wide range of demanding tasks.

Applications

  • Desktops and Laptops: Primary system memory for running applications and operating systems.
  • Graphics Cards: Provides video memory to store textures, framebuffers, and other graphics-related data.
  • Gaming Consoles: Main memory for game execution and data storage.
  • Servers: Utilized in server systems for handling large datasets and running complex applications.
  • Networking Equipment: Employed in routers, switches, and other network devices for buffering and packet processing.

Features

  • Capacity: 4Gbit (256M x 16)
  • Data Rate: DDR3 (Double Data Rate 3)
  • Operating Voltage: Typically 1.5V
  • Interface: High-speed parallel interface
  • Clock Speed: High clock frequencies for fast data access
  • Package: FBGA (Fine-pitch Ball Grid Array) for improved thermal and electrical performance.
  • Advanced Features: Includes features like on-die termination (ODT) and write leveling to enhance signal integrity and performance.

Benefits

  • High Bandwidth: DDR3 technology offers high data transfer rates, boosting overall system performance.
  • Low Latency: Fast access times minimize delays and improve system responsiveness.
  • Large Capacity: 4Gbit capacity enables storing substantial amounts of data.
  • Power Efficiency: Low operating voltage reduces power consumption and heat generation.
  • Reliability: Samsung is a well-known manufacturer producing reliable memory components.
  • Improved Signal Integrity: ODT and write leveling features ensure stable and reliable data transfer.

Additional Details

The K4B4G1646E-BYK0 DDR3 SDRAM is designed to meet the stringent demands of high-performance applications. Its advanced features and reliable operation make it an excellent choice for systems requiring high bandwidth, low latency, and large memory capacity. The FBGA package enhances thermal dissipation and electrical characteristics, ensuring stable operation under high-speed conditions. This memory component adheres to JEDEC standard specifications, ensuring broad compatibility with various systems. Detailed timing and electrical characteristics can be found in the official Samsung datasheet.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.6119 $53.0595
11+ $9.9403 $109.3433
16+ $9.6045 $153.6720
23+ $8.9329 $205.4567
30+ $8.5970 $257.9100
37+ $8.2612 $305.6644
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,600 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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