Applications:

• Graphics cards
• Networking equipment
• High-performance computing
• Embedded systems
• Video processing

Features:

• Double data rate architecture: achieves high bandwidth operation
• Clock rate: operates at a clock rate of up to 200 MHz, resulting in a data transfer rate of up to 400 Mbps
• Power-saving features: incorporates power-down and self-refresh modes to minimize power consumption during idle periods
• Burst Length: Configurable burst length of 2, 4, 8
• Data Masking: Supports data masking functionality, allowing for selective writing of data to memory locations

Benefits:

• High Bandwidth: Double data rate architecture provides high bandwidth operation, which improves system performance by enabling faster data transfer rates.
• Low Latency: Low latency design minimizes delays in memory access, resulting in improved system responsiveness and overall performance.
• Power Efficiency: Power-saving features such as power-down and self-refresh modes help to reduce power consumption, extending battery life in portable devices and reducing energy costs in other applications.
• Reliability: Manufactured using advanced CMOS technology, offering high reliability and stability over a wide range of operating conditions.
• Flexibility: Configurable burst length provides flexibility in memory access patterns, allowing optimization for different application requirements.

The K4E640412D-TC50 operates at a voltage of 2.5V and is available in a FBGA package. It supports various operating modes including read, write, and refresh, providing flexibility in memory management. The device is designed to meet the stringent requirements of high-performance computing and embedded systems, offering a combination of speed, efficiency, and reliability.