The Samsung K4M561633G-RN75 is a Mobile SDRAM (Synchronous Dynamic Random-Access Memory) chip, designed to provide efficient memory solutions for mobile devices. Manufactured by Samsung, this component is crucial for applications that demand low power consumption and high performance in compact form factors.

Applications:

• Smartphones
• Tablets
• Portable gaming devices
• Digital cameras
• Other battery-powered mobile devices

Features

• Low Power Consumption: Specifically designed to minimize power usage, extending battery life.
• 512Mb Density: Offers a substantial memory capacity for mobile applications.
• Mobile SDRAM: Optimized for use in mobile environments, ensuring efficiency and reliability.
• Compact Packaging: Designed for small form-factor devices, maximizing space efficiency.
• Operating Frequency: Supports high-speed operation for fast data processing.
• Clock Enable (CKE): Incorporates power-down modes to reduce power consumption during idle periods.
• Partial Array Self Refresh (PASR): Allows refreshing of only a portion of the memory array, further reducing power consumption.
• Deep Power Down (DPD): Enters a deep power-down state for minimal energy usage.

Benefits

• Extended Battery Life: Low power consumption translates to longer usage times for mobile devices.
• Improved Mobile Performance: High-speed operation ensures smooth and responsive application performance.
• Enhanced User Experience: Reliable memory performance contributes to a better overall user experience.
• Space Efficiency: Compact design allows for integration into small, portable devices.
• Cost-Effective Solution: Provides a balance of performance and energy efficiency.
• Faster Data Access: Enables quick retrieval and storage of data, crucial for mobile applications.

Additional Details: The K4M561633G-RN75 typically operates at a voltage of 1.8V, which is standard for mobile SDRAM. The specific package type and operating conditions should be verified in the official Samsung datasheet. It incorporates advanced power management features to optimize energy usage dynamically. This memory chip is engineered to withstand the rigors of mobile environments, providing reliable and consistent performance over a wide range of operating conditions. It is also designed with considerations for electromagnetic interference (EMI) to ensure compatibility with other components in the mobile device.