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K4T56163QO-BCE7T

Part No K4T56163QO-BCE7T
Manufacturer Samsung
Catalog DDR
Description DDR2-800 16Mx16
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 942001-K4T56163QO-BCE7T
Series *
Ultra Librarian 3D Model Ultra Librarian K4T56163QO-BCE7T CAD Model

Description

The Samsung K4T56163QO-BCE7T is a DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) chip. DDR3 SDRAM is a type of dynamic RAM that offers significant improvements over its predecessor, DDR2 SDRAM, including higher bandwidth, lower power consumption, and improved performance. It is commonly used as system memory in computers and other electronic devices.

Applications

  • Desktop and Laptop Computers: Used as main system memory for running operating systems, applications, and games.
  • Servers: Provides memory for server systems handling data processing, web hosting, and database management.
  • Gaming Consoles: Employed in gaming consoles to provide fast memory access for game data and textures.
  • Embedded Systems: Utilized in various embedded applications where high-speed memory is required.

Features

  • High Bandwidth: DDR3 memory offers significantly higher bandwidth compared to DDR2, enabling faster data transfer rates.
  • Lower Power Consumption: Operates at a lower voltage than DDR2, resulting in reduced power consumption and heat generation.
  • Improved Performance: Provides improved performance due to faster clock speeds and reduced latency.
  • 8-bit Prefetch: Features an 8-bit prefetch buffer, allowing for more efficient data access.
  • JEDEC Compliant: Adheres to industry standards set by JEDEC, ensuring compatibility and interoperability with other system components.

Benefits

  • Improved System Responsiveness: Enables faster loading times for applications, smoother multitasking, and enhanced overall system responsiveness.
  • Increased Data Throughput: Facilitates quicker data transfer rates for memory-intensive tasks such as video editing, gaming, and scientific simulations.
  • Reduced Power Consumption: Low voltage operation leads to lower power consumption, extending battery life in portable devices and reducing energy costs in desktop systems.
  • Enhanced Stability and Reliability: JEDEC compliance and advanced error correction contribute to stable and reliable memory performance.

Technical Specifications

The K4T56163QO-BCE7T requires datasheet access to precisely determine memory capacity and organization. BCE7T dictates speed grade of the memory module as well as timing specifications.

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