The K9F1G08UOM-YCBO is a 1G-bit (128M x 8 bit) NAND Flash Memory component manufactured by Samsung. This memory chip is designed for applications needing high-density, non-volatile storage with fast read and write capabilities.
Applications:
- Solid State Drives (SSDs): Used as storage media in SSDs for fast boot-up and data access times.
- USB Flash Drives: Provides the storage capacity for portable USB drives.
- Memory Cards (SD, microSD): Found in memory cards used in cameras, smartphones, and other portable devices.
- Embedded Systems: Employed in embedded systems for storing firmware, data logs, and other critical information.
- Digital Cameras and Camcorders: Stores photos and videos.
- Mobile Phones and Smartphones: Serves as internal storage or for expandable memory.
- MP3 Players: Stores audio files.
- Navigation Systems: Stores map data and navigation information.
Features:
- High-Density NAND Flash Memory: Offers a storage capacity of 1G-bit.
- 8-bit Data Bus: Enables efficient data transfer.
- Page Size: (2048 + 64) Bytes.
- Block Size: (128K + 4K) Bytes.
- Supply Voltage: Operates within a voltage range of 2.7V to 3.6V.
- Operating Temperature: Functions reliably in temperatures ranging from -40°C to +85°C.
- Fast Program and Erase Times: Allows for quick data writing and erasing operations.
- Reliable Data Retention: Ensures data integrity for extended periods.
- Command/Address/Data Multiplexed I/O Port.
- Automatic Page Write Operation.
- Automatic Block Erase Operation.
- Copy-Back Program Operation.
- Hardware Data Protection.
- Serial Access.
Benefits:
- Large Storage Capacity: Provides ample storage in a compact form factor.
- Rapid Data Transfer: Facilitates swift read and write speeds.
- Low Power Consumption: Reduces energy usage, prolonging battery life in portable devices.
- Enhanced Reliability: Secures data integrity and ensures long-lasting storage.
- Cost-Effectiveness: Offers an economical storage solution.
Additional Details:
The K9F1G08UOM-YCBO utilizes NAND Flash technology, organizing data storage in cells arranged in a grid-like structure. It supports various operations, including page read, page program, and block erase. Error correction codes (ECC) are incorporated to enhance data reliability. This non-volatile memory retains stored data even when the power supply is removed, making it suitable for diverse applications that require persistent data storage.