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K9F2G08U0A-PIB0

Part No K9F2G08U0A-PIB0
Manufacturer Samsung
Catalog OEM Parts (J - L)
Description 2GB Nand Flash, Ind Temp, Lead Free
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 971826-K9F2G08U0A-PIB0
Categories OEM Parts(J-L)
Manufacturer Samsung
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian K9F2G08U0A-PIB0 CAD Model

Description

The K9F2G08U0A-PIB0 is a 2Gbit NAND Flash memory device manufactured by Samsung. It is organized as (2K + 64) Bytes x 64 pages x 2048 blocks. This device is designed for mass storage applications and is commonly used in various consumer electronics and industrial devices.

Applications:

  • Solid State Drives (SSDs).
  • USB flash drives.
  • Memory cards (SD, microSD).
  • Embedded systems for storing operating systems and application data.
  • Digital cameras and camcorders.

Features:

  • 2Gbit (256M x 8) NAND Flash Memory.
  • Supply voltage: 2.7V to 3.6V.
  • Page size: (2K + 64) Bytes.
  • Block size: (128K + 4K) Bytes.
  • Data transfer rate: Up to 40MB/s.
  • Operating temperature: -40°C to 85°C.

Benefits:

  • High storage capacity: Provides ample storage for large files and applications.
  • Fast data transfer: Enables quick read and write operations, improving system performance.
  • Non-volatile storage: Retains data even when power is removed.
  • Compact size: Allows for integration into small form factor devices.
  • High endurance: Withstands a large number of program/erase cycles.

Additional Details:

The K9F2G08U0A-PIB0 operates within a supply voltage range of 2.7V to 3.6V, making it suitable for battery-powered devices. The page size of (2K + 64) Bytes and block size of (128K + 4K) Bytes are standard for NAND flash memory devices. The data transfer rate of up to 40MB/s enables fast read and write operations, enhancing overall system responsiveness. This NAND flash memory device is designed for applications requiring reliable and high-capacity storage. Its wide operating temperature range ensures it can function in various environmental conditions. The device is commonly used in solid-state drives, USB flash drives, memory cards, and embedded systems. The non-volatile nature of NAND flash memory ensures that data is retained even when power is removed, making it ideal for storage applications. The high endurance of the device ensures that it can withstand a large number of program/erase cycles, extending its lifespan.

Samsung's reputation for producing high-quality memory devices ensures the reliability and performance of the K9F2G08U0A-PIB0. Its robust design and manufacturing quality make it a suitable choice for demanding storage applications.

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