The KM6161002AT-12 is a high-speed 1Mbit Static RAM (SRAM) manufactured by Samsung. This SRAM chip is designed for applications demanding fast access times and low power consumption. It features advanced CMOS technology to achieve high performance and reliable data storage. The device is organized as 128K x 8 bits and operates from a single 5V power supply.

Applications:

• Cache memory in microprocessor systems
• High-speed data acquisition systems
• Networking equipment (routers, switches)
• Embedded systems requiring fast memory access
• Industrial control systems

Features:

• Fast access time: -12 indicates a 12ns access time, which allows for very fast read and write operations.
• Low power consumption: CMOS technology ensures minimal power dissipation, especially in standby mode.
• Single 5V power supply: Simplifies system design and reduces power supply complexity.
• 128K x 8 bit organization: Provides a convenient byte-wide data interface.
• TTL compatible inputs and outputs: Enables easy interfacing with other digital components.
• Three-state outputs: Allow for easy memory expansion and bus sharing.

Benefits:

• Improved system performance: The fast access time of the KM6161002AT-12 significantly enhances the speed and responsiveness of the system.
• Reduced power consumption: The low power consumption of the CMOS technology translates to lower operating costs and extended battery life in portable devices.
• Simplified system design: The single 5V power supply and TTL compatible inputs/outputs streamline the system design process.
• High reliability: Samsung's stringent quality control ensures reliable operation in demanding environments.
• Easy integration: The byte-wide data interface and three-state outputs simplify integration into a variety of systems.

Additional Details:

The KM6161002AT-12 is typically available in a 32-pin DIP or SOJ package. It operates over a standard commercial temperature range of 0°C to 70°C. The chip includes features such as output enable (OE) and chip enable (CE) for flexible memory control. Its fast access time and low power consumption make it suitable for performance-critical applications.